关键词: 绝缘栅双极型晶体管, 功率损耗, 损耗模型

Abstract: To obtain insulated gate bipolar transistor(IGBT) power loss accurately, an accurate measurement calculation of the power inverter loss model was established. Through the double pulse test, the parameters(E_on、E_off and E_rec) affecting IGBT switching loss were got by double pulse test. and a mathematical model of general power device conduction loss and switching loss modelwas established. Based on the consideration of the thermal coupling between IGBT chips, a mathematical model of junction temperature estimationwas proposed. The accuracy of junction temperature prediction model of the loss model was verified by the junction temperature test. The loss model and junction temperature prediction method established have great engineering practical significance for improving the reliability of power modules and reducing costs of development.

Key words: insulated gate bipolar transistor(IGBT), power loss, modeling of power loss