一种大功率IGBT模块驱动电路设计

微特电机 ›› 2021, Vol. 49 ›› Issue (11): 43-46.

一种大功率IGBT模块驱动电路设计

王佳军, 陈息坤, 顾隽楠, 李睿莹, 孙泽

上海大学机电工程与自动化学院,上海 200444

收稿日期:2021-08-11 出版日期:2021-11-28 发布日期:2021-11-16
作者简介:王佳军(1997—),男,硕士研究生,研究方向为大功率电力电子变换、电力电子技术与应用。

A High-Power IGBT Module Drive Circuit Design

WANG Jia-jun, CHEN Xi-kun, GU Jun-nan, LI Rui-ying, SUN Ze

School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200444, China

Received:2021-08-11 Online:2021-11-28 Published:2021-11-16

摘要/Abstract

摘要： 绝缘栅双极型晶体管(IGBT)驱动电路的设计是确保系统安全可靠运行的关键。针对大功率场合中2ED020I12-F2驱动能力不足的问题进行分析,并设计一款适用于大功率IGBT模块的驱动电路。同时提供了一种通过光纤收发器传输驱动信号以及隔离电源供电电路的设计,通过实验证明了该驱动电路设计的正确性和可靠性。

关键词: IGBT, 驱动电路, 光纤, 隔离电源, 2ED020I12-F2

Abstract: The design of insulated gate bipolar transistor (IGBT) drive circuits is key to ensuring safe and reliable system operation. The problem of insufficient drive capability of the 2ED020I12-F2 in high-power applications was analyzed and a drive circuit for high-power IGBT modules was designed.A circuit design was provided for transmitting the drive signal through an optical fibre transceiver and isolating the power supply, and the correctness and reliability of the drive circuit design were proved through experiments.

Key words: insulated gate bipolar transistor(IGBT), drive circuit, optical fibre, isolated power supply, 2ED020I12-F2

中图分类号:

TM464

王佳军, 陈息坤, 顾隽楠, 李睿莹, 孙泽. 一种大功率IGBT模块驱动电路设计[J]. 微特电机, 2021, 49(11): 43-46.

WANG Jia-jun, CHEN Xi-kun, GU Jun-nan, LI Rui-ying, SUN Ze. A High-Power IGBT Module Drive Circuit Design[J]. Small & Special Electrical Machines, 2021, 49(11): 43-46.

参考文献 12

[1]	陈坚,康勇.电力电子学[M].北京:高等教育出版社,2011.
[2]	谢运祥.IR2130驱动器及其在逆变器中的应用[J].微电机,2001,34(2):50-52.
[3]	仙童半导体公司.供髙电压栅极驱动器IC使用的自举电路的设计和使用准则_AN-6067[Z].美国:仙童半导体公司,2008.
[4]	MUSUMECI S, RACITI A, TESTA A,et al. Switching-behavior improvement of insulated gate-controlled devices[J]. IEEE Transactions on Power Electronics,1997,12(4):645-653.
[5]	CHOKHAWALA R S, CATT J, PELL B R. Gate drive considerations for IGBT modules[J]//IEEE Transactions on Industry Applications,1995,31(3):603-611.
[6]	戴珂,段科威,张树全,等.一种光纤传导的大功率IGBT驱动电路的设计[J].通信电源技术,2011(3):1-3.
[7]	李桂丹,高晗璎,张春喜.基于SG3525的DC/DC直流变换器的研究[J].通信电源技术,2008(5):28-30.
[8]	马立新,费少帅,张海兵,等.基于2ED020I12-F2的IGBT驱动电路设计[J].电子科技,2015,28(1):5-6.
[9]	韩德火,王艳,殷天明.基于1ED020I12-FA的开关磁阻电动机驱动电路[J].微特电机,2013(41):56-57.
[10]	谢嘉林.用于碳化硅MOSTEF与硅IGBT的驱动电路研究与设计[D].成都:电子科技大学,2020.
[11]	刘海红,杨媛,刘海锋.大功率 IGBT 驱动保护方法研究进展综述[J].电子设计工程,2015,23(7):104-106,110.
[12]	WANG Z,SHI X,TOLBERT L M,et al.Switching performance improvement of IGBT modules using an active gate driver[C]//IEEE Applied Power Electronics Conference and Exposition,2013:1266-1273.